Effects of impurities in hafnium dioxide

B. Xia; A. Stesmans; F. Chen; Z. Zhang; W. L. Gladfelter; S. A. Campbell

Effects of impurities in hafnium dioxide

B. Xia, A. Stesmans, F. Chen, Z. Zhang, W. L. Gladfelter, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of impurities in HfO ₂ is measured. The precursor used for these studies is Hf(NO ₃) ₄. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO ₂ signal after ⁶⁰Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO ₂ and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

Original language	English (US)
Title of host publication	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Editors	M.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev
Pages	304-312
Number of pages	9
Volume	1
State	Published - Oct 28 2004
Event	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004

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Other	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	5/10/04 → 5/12/04

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Effects of impurities in hafnium dioxide. / Xia, B.; Stesmans, A.; Chen, F. et al.
Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. ed. / M.C. Ozturk; L.J. Chen; P.J. Timans; F. Roozeboom; E.P. Gusev. Vol. 1 2004. p. 304-312.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xia, B, Stesmans, A, Chen, F, Zhang, Z, Gladfelter, WL & Campbell, SA 2004, Effects of impurities in hafnium dioxide. in MC Ozturk, LJ Chen, PJ Timans, F Roozeboom & EP Gusev (eds), Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. vol. 1, pp. 304-312, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 5/10/04.

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abstract = "The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to{\~ }1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.",

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AB - The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

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Effects of impurities in hafnium dioxide

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