TY - JOUR
T1 - Effects of surface reconstruction on CdTe/GaAs(001) interface structure
AU - Angelo, J. E.
AU - Gerberich, W. W.
AU - Bratina, C.
AU - Sorba, L.
AU - Franciosi, A.
N1 - Funding Information:
This work was partially supported by the US
PY - 1993/6
Y1 - 1993/6
N2 - CdTe/GaAs(001) heterostructures were fabricated by molecular beam epitaxy on chemically etched and thermally deoxidized GaAs(001) substrates, as well as GaAs(001) (3×1) buffer layers grown in situ by molecular beam epitaxy. Different growth protocols were also explored, leading to Te-induced (6×1) or (2×1) surface reconstructions during the early growth stage. High-resolution cross-sectional transmission electron microscopy was used to examine the final interface structure resulting from the different substrate preparations, and surface reconstructions. The (2×1) surface reconstruction led to pure (001) growth, while the (6×1) reconstruction led to an interface which included small (111)-oriented inclusions. In addition, deposition on etched and deoxidized GaAs(001) wafers led to preferential CdTe growth within etch pits and resulted in a macroscopically rough interface region.
AB - CdTe/GaAs(001) heterostructures were fabricated by molecular beam epitaxy on chemically etched and thermally deoxidized GaAs(001) substrates, as well as GaAs(001) (3×1) buffer layers grown in situ by molecular beam epitaxy. Different growth protocols were also explored, leading to Te-induced (6×1) or (2×1) surface reconstructions during the early growth stage. High-resolution cross-sectional transmission electron microscopy was used to examine the final interface structure resulting from the different substrate preparations, and surface reconstructions. The (2×1) surface reconstruction led to pure (001) growth, while the (6×1) reconstruction led to an interface which included small (111)-oriented inclusions. In addition, deposition on etched and deoxidized GaAs(001) wafers led to preferential CdTe growth within etch pits and resulted in a macroscopically rough interface region.
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U2 - 10.1016/0022-0248(93)90534-4
DO - 10.1016/0022-0248(93)90534-4
M3 - Article
AN - SCOPUS:0027607238
SN - 0022-0248
VL - 130
SP - 459
EP - 465
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -