Abstract
In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.
Original language | English (US) |
---|---|
Title of host publication | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 141-144 |
Number of pages | 4 |
ISBN (Electronic) | 9781479969111 |
DOIs | |
State | Published - Mar 18 2015 |
Event | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: Jan 26 2015 → Jan 28 2015 |
Publication series
Name | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
---|
Other
Other | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 |
---|---|
Country/Territory | Italy |
City | Bologna |
Period | 1/26/15 → 1/28/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.