Electrical characterization of thin single crystals of sexithiophene

C. Daniel Frisbie, Eric L. Granstrom, Michael J. Loiacono

Research output: Contribution to journalConference articlepeer-review

Abstract

Extremely thin, single crystals of sexithiophene (6T), 2-14 nm thick and 2-5 μm in length and width, can be grown on flat gold substrates by thermal evaporation. The thickness dimension corresponds to 1-6 monolayers (ML) of 6T molecules arranged with their long axes nearly perpendicular to the substrate. We have measured the current-voltage (I-V) characteristics through the thickness of these crystallites, after doping them with iodine, using conducting probe atomic force microscopy (CPAFM). The I-V traces are linear in the ±50 mV regime. The conductance (I/V) of the doped 6T crystals does not decrease monotonically with increasing thickness as might be expected, but instead has a maximum at 3 ML thickness, and we discuss several possible explanations for this observation.

Original languageEnglish (US)
Pages (from-to)431-434
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume488
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

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