Electronic subbands for AlxGa1-xAs/GaAs multilayer and superlattice structures

P. P. Ruden, D. C. Engelhardt, J. K. Abrokwah

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Abstract

We have carried out calculations of the conduction bandstructure for GaAs/AlxGa1-xAs (0<x≤1) multilayer structures with very thin layers. We report results for the case of a small number of layers for which the quasi-continuous bandstructure of a large superlattice is a poor approximation. Using a multivalley effective mass approach which includes nonparabolicity, we find that for large aluminum concentrations and thin layers the lowest bound state is derived from the X valley and is localized mainly in the alloy layers. The structures investigated have a range of design parameters which is useful for superlattice modulation-doped field-effect transistors.

Original languageEnglish (US)
Pages (from-to)294-298
Number of pages5
JournalJournal of Applied Physics
Volume61
Issue number1
DOIs
StatePublished - Dec 1 1987

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