Abstract
We have carried out calculations of the conduction bandstructure for GaAs/AlxGa1-xAs (0<x≤1) multilayer structures with very thin layers. We report results for the case of a small number of layers for which the quasi-continuous bandstructure of a large superlattice is a poor approximation. Using a multivalley effective mass approach which includes nonparabolicity, we find that for large aluminum concentrations and thin layers the lowest bound state is derived from the X valley and is localized mainly in the alloy layers. The structures investigated have a range of design parameters which is useful for superlattice modulation-doped field-effect transistors.
Original language | English (US) |
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Pages (from-to) | 294-298 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 61 |
Issue number | 1 |
DOIs | |
State | Published - 1987 |