Erratum: Expression of concern: Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001 (Properties of Mg doped GaAs grown by molecular beam epitaxy (2001) 226(1) (52–56), (S0022024801013641), (10.1016/S0022-0248(01)01364-1))

Jeffrey J. Derby

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