Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon

W. B. Jackson, J. Kakalios

Research output: Contribution to journalArticlepeer-review

98 Scopus citations

Abstract

The annealing of light-induced metastable defects, as measured by electron-spin resonance, exhibits a time dependence that is consistent with the kinetics of other metastable effects found in hydrogenated amorphous silicon Si:H. The decay kinetics for these light-induced defects is related to the dispersive diffusion of hydrogen in Si:H providing strong support for the hypothesis that hydrogen motion is involved in the defect formation process. Mechanisms involving the motion of other defects motions, such as three- or fivefold coordinated silicon atoms, are found to be unlikely.

Original languageEnglish (US)
Pages (from-to)1020-1023
Number of pages4
JournalPhysical Review B
Volume37
Issue number2
DOIs
StatePublished - Jan 1 1988

Fingerprint

Dive into the research topics of 'Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon'. Together they form a unique fingerprint.

Cite this