Abstract
The annealing of light-induced metastable defects, as measured by electron-spin resonance, exhibits a time dependence that is consistent with the kinetics of other metastable effects found in hydrogenated amorphous silicon Si:H. The decay kinetics for these light-induced defects is related to the dispersive diffusion of hydrogen in Si:H providing strong support for the hypothesis that hydrogen motion is involved in the defect formation process. Mechanisms involving the motion of other defects motions, such as three- or fivefold coordinated silicon atoms, are found to be unlikely.
Original language | English (US) |
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Pages (from-to) | 1020-1023 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 37 |
Issue number | 2 |
DOIs | |
State | Published - Jan 1 1988 |