Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate

Jichao Hu; Lianbi Li; Rong Wang; Hong Chen; Yongkang Xu; Yuan Zang; Zebin Li; Song Feng; Qianqian Lei; Caijuan Xia; Jeong Hyun Cho

doi:10.1016/j.matlet.2020.128599

Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate

Jichao Hu, Lianbi Li, Rong Wang, Hong Chen, Yongkang Xu, Yuan Zang, Zebin Li, Song Feng, Qianqian Lei, Caijuan Xia, Jeong Hyun Cho

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In order to realize a flexible visible-near-infrared (VIS-NIR) photodetector, Si nanowires (SiNWs) were prepared on graphene (Gr) by using metal-catalyzed chemical vapor deposition, and then the Gr/SiNWs heterojunction was transferred onto a flexible polytetrafluoroethylene (PTFE) substrate by using a polymethylmethacrylate (PMMA)/polydimethylsiloxane (PDMS) as a double-layer support film. The transfer process of the flexible Gr/SiNWs heterojunction was successful. However, the mechanical stress induced by the spin coating process and volume shrinkage of the PMMA/PDMS layers had an impact on the crystalline structure of the SiNWs. The as-fabricated Gr/SiNWs heterojunction photodiode indicated rectifying behavior. Under VIS-NIR illumination of 0.1 W/cm², an apparent operation of the photodiode with a photoelectric effect was observed.

Original language	English (US)
Article number	128599
Journal	Materials Letters
Volume	281
DOIs	https://doi.org/10.1016/j.matlet.2020.128599
State	Published - Dec 15 2020

Bibliographical note

Funding Information:
This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), National Natural Science Foundation of China (Grant No. 51402230), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Science and Technology Plan Project of Xi'an (Grant No. 2020KJRC0026).

Funding Information:
This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500 ), National Natural Science Foundation of China (Grant No. 51402230 ), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083 ), Science and Technology Plan Project of Xi’an (Grant No. 2020KJRC0026 ).

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

Flexible device
Graphene
Raman spectrum
Silicon nanowires

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@article{121d5089140b4d5a9ecb8519a2a17922,

title = "Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate",

abstract = "In order to realize a flexible visible-near-infrared (VIS-NIR) photodetector, Si nanowires (SiNWs) were prepared on graphene (Gr) by using metal-catalyzed chemical vapor deposition, and then the Gr/SiNWs heterojunction was transferred onto a flexible polytetrafluoroethylene (PTFE) substrate by using a polymethylmethacrylate (PMMA)/polydimethylsiloxane (PDMS) as a double-layer support film. The transfer process of the flexible Gr/SiNWs heterojunction was successful. However, the mechanical stress induced by the spin coating process and volume shrinkage of the PMMA/PDMS layers had an impact on the crystalline structure of the SiNWs. The as-fabricated Gr/SiNWs heterojunction photodiode indicated rectifying behavior. Under VIS-NIR illumination of 0.1 W/cm2, an apparent operation of the photodiode with a photoelectric effect was observed.",

keywords = "Flexible device, Graphene, Raman spectrum, Silicon nanowires",

author = "Jichao Hu and Lianbi Li and Rong Wang and Hong Chen and Yongkang Xu and Yuan Zang and Zebin Li and Song Feng and Qianqian Lei and Caijuan Xia and Cho, {Jeong Hyun}",

note = "Funding Information: This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), National Natural Science Foundation of China (Grant No. 51402230), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Science and Technology Plan Project of Xi'an (Grant No. 2020KJRC0026). Funding Information: This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500 ), National Natural Science Foundation of China (Grant No. 51402230 ), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083 ), Science and Technology Plan Project of Xi{\textquoteright}an (Grant No. 2020KJRC0026 ). Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

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doi = "10.1016/j.matlet.2020.128599",

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T1 - Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate

AU - Hu, Jichao

AU - Li, Lianbi

AU - Wang, Rong

AU - Chen, Hong

AU - Xu, Yongkang

AU - Zang, Yuan

AU - Li, Zebin

AU - Feng, Song

AU - Lei, Qianqian

AU - Xia, Caijuan

AU - Cho, Jeong Hyun

N1 - Funding Information: This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), National Natural Science Foundation of China (Grant No. 51402230), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083), Science and Technology Plan Project of Xi'an (Grant No. 2020KJRC0026). Funding Information: This work was supported financially by the National Key Research and Development Program of China (Grant No. 2018YFB2200500 ), National Natural Science Foundation of China (Grant No. 51402230 ), Key Research and Development Program of Shaanxi Province (Grant No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2019JM-083 ), Science and Technology Plan Project of Xi’an (Grant No. 2020KJRC0026 ). Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/12/15

Y1 - 2020/12/15

N2 - In order to realize a flexible visible-near-infrared (VIS-NIR) photodetector, Si nanowires (SiNWs) were prepared on graphene (Gr) by using metal-catalyzed chemical vapor deposition, and then the Gr/SiNWs heterojunction was transferred onto a flexible polytetrafluoroethylene (PTFE) substrate by using a polymethylmethacrylate (PMMA)/polydimethylsiloxane (PDMS) as a double-layer support film. The transfer process of the flexible Gr/SiNWs heterojunction was successful. However, the mechanical stress induced by the spin coating process and volume shrinkage of the PMMA/PDMS layers had an impact on the crystalline structure of the SiNWs. The as-fabricated Gr/SiNWs heterojunction photodiode indicated rectifying behavior. Under VIS-NIR illumination of 0.1 W/cm2, an apparent operation of the photodiode with a photoelectric effect was observed.

AB - In order to realize a flexible visible-near-infrared (VIS-NIR) photodetector, Si nanowires (SiNWs) were prepared on graphene (Gr) by using metal-catalyzed chemical vapor deposition, and then the Gr/SiNWs heterojunction was transferred onto a flexible polytetrafluoroethylene (PTFE) substrate by using a polymethylmethacrylate (PMMA)/polydimethylsiloxane (PDMS) as a double-layer support film. The transfer process of the flexible Gr/SiNWs heterojunction was successful. However, the mechanical stress induced by the spin coating process and volume shrinkage of the PMMA/PDMS layers had an impact on the crystalline structure of the SiNWs. The as-fabricated Gr/SiNWs heterojunction photodiode indicated rectifying behavior. Under VIS-NIR illumination of 0.1 W/cm2, an apparent operation of the photodiode with a photoelectric effect was observed.

KW - Flexible device

KW - Graphene

KW - Raman spectrum

KW - Silicon nanowires

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JF - Materials Letters

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ER -

Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate

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