Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

Chia Feng Lin; Yi Hui Tseng; Wen Che Lee; Wei Ju Hsu; Yen Lun Chen; Sung Hyun Park; Jung Han

doi:10.7567/APEX.7.076501

Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

Chia Feng Lin, Yi Hui Tseng, Wen Che Lee, Wei Ju Hsu, Yen Lun Chen, Sung Hyun Park, Jung Han

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-μm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device's central mesa region.

Original language	English (US)
Article number	076501
Journal	Applied Physics Express
Volume	7
Issue number	7
DOIs	https://doi.org/10.7567/APEX.7.076501
State	Published - Jul 2014

Access

10.7567/APEX.7.076501

OpenUrl availability

Full text

Cite this

@article{b02a3e10ce0642899d77c4b8fb4b6680,

title = "Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes",

abstract = "InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-μm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device's central mesa region.",

author = "Lin, {Chia Feng} and Tseng, {Yi Hui} and Lee, {Wen Che} and Hsu, {Wei Ju} and Chen, {Yen Lun} and Park, {Sung Hyun} and Jung Han",

year = "2014",

month = jul,

doi = "10.7567/APEX.7.076501",

language = "English (US)",

volume = "7",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

AU - Lin, Chia Feng

AU - Tseng, Yi Hui

AU - Lee, Wen Che

AU - Hsu, Wei Ju

AU - Chen, Yen Lun

AU - Park, Sung Hyun

AU - Han, Jung

PY - 2014/7

Y1 - 2014/7

N2 - InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-μm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device's central mesa region.

AB - InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-μm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device's central mesa region.

UR - http://www.scopus.com/inward/record.url?scp=84904677210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904677210&partnerID=8YFLogxK

U2 - 10.7567/APEX.7.076501

DO - 10.7567/APEX.7.076501

M3 - Article

AN - SCOPUS:84904677210

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 076501

ER -

Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this