Fast spintronic thermal sensor for IC power driver cooling down

Yanfeng Jiang, Yisong Zhang, Angeline Klemm, Jianping Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel thermal sensor is designed and fabricated based on spin-transfer torque operated magnetic tunnel junction (STT-MTJ) device. It can fulfill thermal detection and overheat protection on integrated circuit. Moreover, it shows over 10 times faster thermal transit response speed than that of traditional CMOS thermal sensor. The unique property is really helpful for controlling integrated circuit's temperature due to heating by leakage current. A power driver at full loading situation is used to demonstrate this design. It shows that the sensor can be adopted as adaptive manner in a power source scaling strategy to cool down the IC in an effective way, showing a promising potential application not only as discrete sensor, but also as power solution for IC driver.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages26.2.1-26.2.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - Jan 31 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/TerritoryUnited States
CitySan Francisco
Period12/3/1612/7/16

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