Abstract
A novel thermal sensor is designed and fabricated based on spin-transfer torque operated magnetic tunnel junction (STT-MTJ) device. It can fulfill thermal detection and overheat protection on integrated circuit. Moreover, it shows over 10 times faster thermal transit response speed than that of traditional CMOS thermal sensor. The unique property is really helpful for controlling integrated circuit's temperature due to heating by leakage current. A power driver at full loading situation is used to demonstrate this design. It shows that the sensor can be adopted as adaptive manner in a power source scaling strategy to cool down the IC in an effective way, showing a promising potential application not only as discrete sensor, but also as power solution for IC driver.
Original language | English (US) |
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Title of host publication | 2016 IEEE International Electron Devices Meeting, IEDM 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 26.2.1-26.2.4 |
ISBN (Electronic) | 9781509039012 |
DOIs | |
State | Published - Jan 31 2017 |
Event | 62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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ISSN (Print) | 0163-1918 |
Other
Other | 62nd IEEE International Electron Devices Meeting, IEDM 2016 |
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Country/Territory | United States |
City | San Francisco |
Period | 12/3/16 → 12/7/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.