First passage based modeling of probabilistic failure of polycrystalline silicon MEMS structures

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study presents a first passage based analysis of probabilistic failure of polycrystalline silicon (poly-Si) MEMS structures. The model takes into account both the autocorrelated random strength field and the random stress field. The model is formulated based on the concepts of stationary and non-stationary stochastic processes. It is shown that the model agrees well with the measured strength distributions of uniaxial tensile poly-Si MEMS specimens of different sizes. The present model predicts strong size effects on both the strength distribution and the mean structural strength. An approximate mean size effect equation is developed based on asymptotic matching. The present model is shown to be a generalization of the classical weakest-link statistical model, and it provides a physical interpretation of the material length scale of the weakest-link model.

Original languageEnglish (US)
Title of host publicationICF 2017 - 14th International Conference on Fracture
EditorsEmmanuel E. Gdoutos
PublisherInternational Conference on Fracture
Pages789-790
Number of pages2
ISBN (Electronic)9780000000002
StatePublished - 2017
Event14th International Conference on Fracture, ICF 2017 - Rhodes, Greece
Duration: Jun 18 2017Jun 20 2017

Publication series

NameICF 2017 - 14th International Conference on Fracture
Volume1

Conference

Conference14th International Conference on Fracture, ICF 2017
Country/TerritoryGreece
CityRhodes
Period6/18/176/20/17

Bibliographical note

Funding Information:
The authors would like to acknowledge the financial support of the U.S. National Science Foundation under grant CMMI-1361868.

Publisher Copyright:
© 2017 ICF 2017 - 14th International Conference on Fracture. All rights reserved.

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