Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

J. K. Tu; J. J. Talghader; J. S. Smith; M. A. Hadley

doi:10.1049/el:19950989

Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

J. K. Tu, J. J. Talghader, J. S. Smith, M. A. Hadley

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm₃ devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

Original language	English (US)
Pages (from-to)	1448-1449
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	17
DOIs	https://doi.org/10.1049/el:19950989
State	Published - Aug 17 1995

Keywords

Packaging
Vertical cavity surface emitting lasers

Access

10.1049/el:19950989

OpenUrl availability

Full text

Cite this

@article{864ce5ca279c4196bcb720b3bc266547,

title = "Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon",

abstract = "Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.",

keywords = "Packaging, Vertical cavity surface emitting lasers",

author = "Tu, {J. K.} and Talghader, {J. J.} and Smith, {J. S.} and Hadley, {M. A.}",

year = "1995",

month = aug,

day = "17",

doi = "10.1049/el:19950989",

language = "English (US)",

volume = "31",

pages = "1448--1449",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

AU - Tu, J. K.

AU - Talghader, J. J.

AU - Smith, J. S.

AU - Hadley, M. A.

PY - 1995/8/17

Y1 - 1995/8/17

N2 - Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

AB - Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40 × 40 × 10 μm3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at 0.98 μm with a threshold current as low as 75mA and a turn-on voltage of 2.9V.

KW - Packaging

KW - Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=0029354571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029354571&partnerID=8YFLogxK

U2 - 10.1049/el:19950989

DO - 10.1049/el:19950989

M3 - Article

AN - SCOPUS:0029354571

SN - 0013-5194

VL - 31

SP - 1448

EP - 1449

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon

Abstract

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this