Two-dimensional simulation of a rapid thermal processing (RTP) reactor is used to determine the radiative heating and the radiative and convective cooling. The gas flow patterns are found to be a strong function of temperature. Edge losses dominate the wafer thermal nonuniformity at high temperature, while convective cooling dominates at low temperature. A peak in the stress is found under transient conditions. To validate the model, some of the results are compared to experimental data from a small custom RTP system.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1990|
|Event||1990 International Electron Devices Meeting - San Francisco, CA, USA|
Duration: Dec 9 1990 → Dec 12 1990