Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

Wei Yi; Andrey A. Kiselev; Jacob Thorp; Ramsey Noah; Binh Minh Nguyen; Steven Bui; Rajesh D. Rajavel; Tahir Hussain; Mark F. Gyure; Philip Kratz; Qi Qian; Michael J. Manfra; Vlad S. Pribiag; Leo P. Kouwenhoven; Charles M. Marcus; Marko Sokolich

doi:10.1063/1.4917027

Gate-tunable high mobility remote-doped InSb/In_1-xAl_xSb quantum well heterostructures

Wei Yi, Andrey A. Kiselev, Jacob Thorp, Ramsey Noah, Binh Minh Nguyen, Steven Bui, Rajesh D. Rajavel, Tahir Hussain, Mark F. Gyure, Philip Kratz, Qi Qian, Michael J. Manfra, Vlad S. Pribiag, Leo P. Kouwenhoven, Charles M. Marcus, Marko Sokolich

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Gate-tunable high-mobility InSb/In_1-xAl_xSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm²/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO₂ gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

Original language	English (US)
Article number	142103
Journal	Applied Physics Letters
Volume	106
Issue number	14
DOIs	https://doi.org/10.1063/1.4917027
State	Published - Apr 6 2015

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Publisher Copyright:
© 2015 AIP Publishing LLC.

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Yi, W., Kiselev, A. A., Thorp, J., Noah, R., Nguyen, B. M., Bui, S., Rajavel, R. D., Hussain, T., Gyure, M. F., Kratz, P., Qian, Q., Manfra, M. J., Pribiag, V. S., Kouwenhoven, L. P., Marcus, C. M., & Sokolich, M. (2015). Gate-tunable high mobility remote-doped InSb/In_1-xAl_xSb quantum well heterostructures. Applied Physics Letters, 106(14), Article 142103. https://doi.org/10.1063/1.4917027

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abstract = "Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.",

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AU - Yi, Wei

AU - Kiselev, Andrey A.

AU - Thorp, Jacob

AU - Noah, Ramsey

AU - Nguyen, Binh Minh

AU - Bui, Steven

AU - Rajavel, Rajesh D.

AU - Hussain, Tahir

AU - Gyure, Mark F.

AU - Kratz, Philip

AU - Qian, Qi

AU - Manfra, Michael J.

AU - Pribiag, Vlad S.

AU - Kouwenhoven, Leo P.

AU - Marcus, Charles M.

AU - Sokolich, Marko

PY - 2015/4/6

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N2 - Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

AB - Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

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