Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

Wei Yi, Andrey A. Kiselev, Jacob Thorp, Ramsey Noah, Binh Minh Nguyen, Steven Bui, Rajesh D. Rajavel, Tahir Hussain, Mark F. Gyure, Philip Kratz, Qi Qian, Michael J. Manfra, Vlad S. Pribiag, Leo P. Kouwenhoven, Charles M. Marcus, Marko Sokolich

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Abstract

Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

Original languageEnglish (US)
Article number142103
JournalApplied Physics Letters
Volume106
Issue number14
DOIs
StatePublished - Apr 6 2015

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