TY - JOUR
T1 - Growth of black arsenic phosphorus thin films and its application for field-effect transistors
AU - Izquierdo, Nezhueyotl
AU - Myers, Jason C.
AU - Golani, Prafful
AU - De Los Santos, Adonica
AU - Seaton, Nicholas C.A.
AU - Koester, Steven J.
AU - Campbell, Stephen A.
N1 - Publisher Copyright:
© 2021 IOP Publishing Ltd.
PY - 2021/8/6
Y1 - 2021/8/6
N2 - Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 110 μm and ranging from 200 nm to 2 μ m thick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2 V-1 s-1 at V d = -0.9 V and V g = -60 V.
AB - Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 110 μm and ranging from 200 nm to 2 μ m thick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2 V-1 s-1 at V d = -0.9 V and V g = -60 V.
KW - black arsenic phosphorus
KW - crystal growth
KW - thin film
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U2 - 10.1088/1361-6528/abfc09
DO - 10.1088/1361-6528/abfc09
M3 - Article
C2 - 33906169
AN - SCOPUS:85106991796
SN - 0957-4484
VL - 32
JO - Nanotechnology
JF - Nanotechnology
IS - 32
M1 - 325601
ER -