Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 110 μm and ranging from 200 nm to 2 μ m thick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2 V-1 s-1 at V d = -0.9 V and V g = -60 V.
Bibliographical noteFunding Information:
Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nano Coordinated Infrastructure Network, under Award ECCS-2025124. N.I. also received support from this award. P.G. and S.J.K. acknowledge support by the NSF under Award ECCS-1708769. Parts of this work were supported by the Partnership for Research and Education in Materials (PREM) Program of the National Science Foundation under Award Number DMR-1523577. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program, under Award DMR-1420013.
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- black arsenic phosphorus
- crystal growth
- thin film
PubMed: MeSH publication types
- Journal Article