Growth rate reduction of GaN due to Ga surface accumulation

D. E. Crawford; R. Held; A. M. Johnston; A. M. Dabiran; Philip I Cohen

doi:10.1557/s1092578300001848

Growth rate reduction of GaN due to Ga surface accumulation

D. E. Crawford, R. Held, A. M. Johnston, A. M. Dabiran, Philip I Cohen

Electrical and Computer Engineering

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Abstract

GaN(0001) has been grown on Al₂O₃ (0001) by molecular beam epitaxy where NH₃ was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

Original language	English (US)
Pages (from-to)	7d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	1
DOIs	https://doi.org/10.1557/s1092578300001848
State	Published - 1996

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title = "Growth rate reduction of GaN due to Ga surface accumulation",

abstract = "GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.",

author = "Crawford, {D. E.} and R. Held and Johnston, {A. M.} and Dabiran, {A. M.} and Cohen, {Philip I}",

year = "1996",

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language = "English (US)",

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T1 - Growth rate reduction of GaN due to Ga surface accumulation

AU - Crawford, D. E.

AU - Held, R.

AU - Johnston, A. M.

AU - Dabiran, A. M.

AU - Cohen, Philip I

PY - 1996

Y1 - 1996

N2 - GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

AB - GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

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JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

Growth rate reduction of GaN due to Ga surface accumulation

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