High mobility III-V channel MOSFETs for post-Si CMOS applications

Yanning Sun; E. W. Kiewra; J. P. De Souza; S. J. Koester; J. J. Bucchignano; N. Ruiz; K. E. Fogel; D. K. Sadana; G. G. Shahidi; J. Fompeyrine; D. J. Webb; M. Sousa; C. Marchiori; R. Germann; K. T. Shiu

doi:10.1109/ICICDT.2009.5166286

High mobility III-V channel MOSFETs for post-Si CMOS applications

Yanning Sun, E. W. Kiewra, J. P. De Souza, S. J. Koester, J. J. Bucchignano, N. Ruiz, K. E. Fogel, D. K. Sadana, G. G. Shahidi, J. Fompeyrine, D. J. Webb, M. Sousa, C. Marchiori, R. Germann, K. T. Shiu

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.

Original language	English (US)
Title of host publication	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Pages	161-164
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2009.5166286
State	Published - 2009
Event	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 - Austin, TX, United States Duration: May 18 2009 → May 20 2009

Publication series

Name	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Other

Other	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
Country/Territory	United States
City	Austin, TX
Period	5/18/09 → 5/20/09

Keywords

CMOS
III-V
InGaAs short-channel MOSFET
Scaling

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10.1109/ICICDT.2009.5166286

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Sun, Y., Kiewra, E. W., De Souza, J. P., Koester, S. J., Bucchignano, J. J., Ruiz, N., Fogel, K. E., Sadana, D. K., Shahidi, G. G., Fompeyrine, J., Webb, D. J., Sousa, M., Marchiori, C., Germann, R., & Shiu, K. T. (2009). High mobility III-V channel MOSFETs for post-Si CMOS applications. In 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 (pp. 161-164). Article 5166286 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). https://doi.org/10.1109/ICICDT.2009.5166286

High mobility III-V channel MOSFETs for post-Si CMOS applications. / Sun, Yanning; Kiewra, E. W.; De Souza, J. P. et al.
2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. 2009. p. 161-164 5166286 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sun, Y, Kiewra, EW, De Souza, JP, Koester, SJ, Bucchignano, JJ, Ruiz, N, Fogel, KE, Sadana, DK, Shahidi, GG, Fompeyrine, J, Webb, DJ, Sousa, M, Marchiori, C, Germann, R & Shiu, KT 2009, High mobility III-V channel MOSFETs for post-Si CMOS applications. in 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009., 5166286, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, pp. 161-164, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, Austin, TX, United States, 5/18/09. https://doi.org/10.1109/ICICDT.2009.5166286

Sun Y, Kiewra EW, De Souza JP, Koester SJ, Bucchignano JJ, Ruiz N et al. High mobility III-V channel MOSFETs for post-Si CMOS applications. In 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. 2009. p. 161-164. 5166286. (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). doi: 10.1109/ICICDT.2009.5166286

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abstract = "III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.",

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High mobility III-V channel MOSFETs for post-Si CMOS applications

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