Abstract
Studies of the electronic transport properties of n-type doped hydrogenated amorphous/nanocrystalline silicon (a/nc-Si:H) films deposited in a dual-plasma co-deposition reactor are described. For these doped a/nc-Si:H, the conductivity increases monotonically for increasing crystal fractions up to 60% and displays marked deviations from a simple thermally activated temperature dependence. Analysis of the temperature dependence of the activation energy for these films finds that the dark conductivity is best described by a power-law temperature dependence, σ= σ o (T/T o) n where n= 1-4, suggesting multiphonon hopping as the main transport mechanism. These results suggest that electronic transport in mixed-phase films occurs through the a-Si:H matrix at lower nanocrystal concentrations and shifts to hopping conduction between clusters of nanocrystals at higher nanocrystal densities.
| Original language | English (US) |
|---|---|
| Title of host publication | Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 |
| Pages | 285-290 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2012 |
| Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 25 2011 → Apr 29 2011 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1321 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2011 MRS Spring Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/25/11 → 4/29/11 |
Bibliographical note
Funding Information:This work was partially supported by NSF grant DMR-0705675, the NINN Characterization Facility, the Xcel Energy grant under RDF contract #RD3-25, and the University of Minnesota.
