TY - JOUR
T1 - Impurity band conduction in Si-doped β -Ga2O3films
AU - Rajapitamahuni, Anil Kumar
AU - Thoutam, Laxman Raju
AU - Ranga, Praneeth
AU - Krishnamoorthy, Sriram
AU - Jalan, Bharat
N1 - Publisher Copyright:
© 2021 Author(s).
PY - 2021/2/15
Y1 - 2021/2/15
N2 - By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (-90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.
AB - By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (-90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.
UR - http://www.scopus.com/inward/record.url?scp=85101233775&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85101233775&partnerID=8YFLogxK
U2 - 10.1063/5.0031481
DO - 10.1063/5.0031481
M3 - Article
AN - SCOPUS:85101233775
SN - 0003-6951
VL - 118
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
M1 - 072105
ER -