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Influence of deposition conditions on long-range electronic disorder in n-type doped hydrogenated amorphous silicon
D. Quicker,
J. Kakalios
Physics and Astronomy (Twin Cities)
Research output
:
Contribution to journal
›
Article
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peer-review
25
Scopus citations
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Engineering & Materials Science
Thermoelectric power
100%
Amorphous silicon
94%
Infrared absorption
73%
Activation energy
71%
Conduction bands
39%
Hydrogen bonds
31%
Hydrogen
18%
Substrates
16%
Microstructure
15%
Computer simulation
12%
Temperature
9%
Physics & Astronomy
amorphous silicon
63%
disorders
53%
electronics
35%
activation energy
30%
infrared absorption
28%
conductivity
27%
low conductivity
17%
hydrogen
16%
proposals
12%
conduction bands
11%
computerized simulation
11%
microstructure
8%
temperature
4%
Chemical Compounds
Amorphous Silicon
93%
Disorder
59%
Conductivity
36%
Reaction Activation Energy
28%
Liquid Film
19%
Conduction Band
14%
Hydrogen
13%
Compound Mobility
10%
Microstructure
9%
Simulation
8%