Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications

G. G. Freeman; B. Jagannathan; N. Zamdmer; R. Groves; R. Singh; Y. Tretiakov; M. Kumar; J. B. Johnson; J. O. Plouchart; D. R. Greenberg; S. J. Koester; J. D. Schaub

doi:10.1142/S0129156403001570

Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications

G. G. Freeman, B. Jagannathan, N. Zamdmer, R. Groves, R. Singh, Y. Tretiakov, M. Kumar, J. B. Johnson, J. O. Plouchart, D. R. Greenberg, S. J. Koester, J. D. Schaub

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating f_T and f_MAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed devices into a complex circuit requires on-chip passive device functionality at such high frequency. Key devices to enable integration are the inductor, varactor, and transmission line, and operation of these devices at high frequency is reported. Further, we discuss noise isolation issues and techniques, which may be used when minimizing cross-talk within a conductive silicon substrate.

Original language	English (US)
Pages (from-to)	175-219
Number of pages	45
Journal	International Journal of High Speed Electronics and Systems
Volume	13
Issue number	1
DOIs	https://doi.org/10.1142/S0129156403001570
State	Published - Mar 2003

Bibliographical note

Funding Information:
Acknowledgment is given to Sue Strang, Donald Jordan and Carl Dickey of the IBM Microelectronics (Burlington, Vermont, USA), David Goren, Rachel Gordin, and Michael Zelikson of the IBM Research and Development Laboratories in Haifa (Haifa, Israel) and Mike Longstreet of the IBM Microelectronics (Fishkill, New York, USA). The authors would also like to acknowledge the support of Dennis Rogers and Min Yang for support and encouragement throughout the course of the trench photodetector work. For the MODFET work presented here, the authors would like to acknowledge the efforts of numerous members of IBM research and microelectronics who contributed to the results presented in this paper. The authors would also like to acknowledge the partial support of SPAWAR Systems Center, SD, Office of Naval Research, under Contract No. N66001-99-C-6000, and DARPA under Contract No. N66001-00-C-8086.

Keywords

Inductor
MODFET
Photodiode
SiGe HBT
Strained silicon
Substrate isolation
Transmission line
Varactor

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Freeman, G. G., Jagannathan, B., Zamdmer, N., Groves, R., Singh, R., Tretiakov, Y., Kumar, M., Johnson, J. B., Plouchart, J. O., Greenberg, D. R., Koester, S. J., & Schaub, J. D. (2003). Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications. International Journal of High Speed Electronics and Systems, 13(1), 175-219. https://doi.org/10.1142/S0129156403001570

Freeman, GG, Jagannathan, B, Zamdmer, N, Groves, R, Singh, R, Tretiakov, Y, Kumar, M, Johnson, JB, Plouchart, JO, Greenberg, DR, Koester, SJ & Schaub, JD 2003, 'Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications', International Journal of High Speed Electronics and Systems, vol. 13, no. 1, pp. 175-219. https://doi.org/10.1142/S0129156403001570

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abstract = "Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating fT and fMAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed devices into a complex circuit requires on-chip passive device functionality at such high frequency. Key devices to enable integration are the inductor, varactor, and transmission line, and operation of these devices at high frequency is reported. Further, we discuss noise isolation issues and techniques, which may be used when minimizing cross-talk within a conductive silicon substrate.",

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AU - Tretiakov, Y.

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AU - Koester, S. J.

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N2 - Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating fT and fMAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed devices into a complex circuit requires on-chip passive device functionality at such high frequency. Key devices to enable integration are the inductor, varactor, and transmission line, and operation of these devices at high frequency is reported. Further, we discuss noise isolation issues and techniques, which may be used when minimizing cross-talk within a conductive silicon substrate.

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Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications

Abstract

Bibliographical note

Keywords

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