Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini, L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J. E. Angelo, W. W. Gerberich

Research output: Contribution to journalArticlepeer-review

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The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

Original languageEnglish (US)
Pages (from-to)294-297
Number of pages4
JournalPhysical review letters
Issue number2
StatePublished - Jan 1 1994

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