Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini; L. Vanzetti; Guido Mula; G. Bratina; L. Sorba; A. Franciosi; M. Peressi; S. Baroni; R. Resta; A. Baldereschi; J. E. Angelo; W. W. Gerberich

doi:10.1103/PhysRevLett.72.294

Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini, L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J. E. Angelo, W. W. Gerberich

Chemical Engineering and Materials Science

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Abstract

The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

Original language	English (US)
Pages (from-to)	294-297
Number of pages	4
Journal	Physical review letters
Volume	72
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.72.294
State	Published - 1994

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title = "Local interface composition and band discontinuities in heterovalent heterostructures",

abstract = "The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.",

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doi = "10.1103/PhysRevLett.72.294",

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T1 - Local interface composition and band discontinuities in heterovalent heterostructures

AU - Nicolini, R.

AU - Vanzetti, L.

AU - Mula, Guido

AU - Bratina, G.

AU - Sorba, L.

AU - Franciosi, A.

AU - Peressi, M.

AU - Baroni, S.

AU - Resta, R.

AU - Baldereschi, A.

AU - Angelo, J. E.

AU - Gerberich, W. W.

PY - 1994

Y1 - 1994

N2 - The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

AB - The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

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Local interface composition and band discontinuities in heterovalent heterostructures

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