Long-range disorder and metastability in amorphous silicon

D. Quicker, P. W. West, J. Kakalios

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Possible changes in the long-range disorder in hydrogenated amorphous silicon (a-Si:H) in association with light-induced defect creation (the Staebler-Wronski effect) have been investigated by combining measurements of the thermopower and conductivity activation energy differences with that of the conductance 1/f noise. There is no observed change in the long-ranged disorder after twenty hours exposure to heat-filtered white light for a series of n-type-doped a-Si:H films.

Original languageEnglish (US)
Pages (from-to)397-400
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume266-269 A
DOIs
StatePublished - May 1 2000
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: Aug 23 1999Aug 27 1999

Bibliographical note

Funding Information:
This work was supported by the University of Minnesota, the NSF DMR-9422772 and NREL/AAD-9-18668-13.

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