Low-resistivity 10 nm diameter magnetic sensors

Mazin M. Maqableh; Xiaobo Huang; Sang Yeob Sung; K. Sai Madhukar Reddy; Gregory Norby; R. H. Victora; Bethanie J.H. Stadler

doi:10.1021/nl301610z

Low-resistivity 10 nm diameter magnetic sensors

Mazin M. Maqableh, Xiaobo Huang, Sang Yeob Sung, K. Sai Madhukar Reddy, Gregory Norby, R. H. Victora, Bethanie J.H. Stadler

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Abstract

Resistivities of 5.4 μω·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.

Original language	English (US)
Pages (from-to)	4102-4109
Number of pages	8
Journal	Nano letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1021/nl301610z
State	Published - Aug 8 2012

Keywords

CPP GMR
Single nanowire resistivity
high density hard drives
magnetic recording
magnetic sensors
read sensors

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title = "Low-resistivity 10 nm diameter magnetic sensors",

abstract = "Resistivities of 5.4 μω·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.",

keywords = "CPP GMR, Single nanowire resistivity, high density hard drives, magnetic recording, magnetic sensors, read sensors",

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AU - Maqableh, Mazin M.

AU - Huang, Xiaobo

AU - Sung, Sang Yeob

AU - Reddy, K. Sai Madhukar

AU - Norby, Gregory

AU - Victora, R. H.

AU - Stadler, Bethanie J.H.

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N2 - Resistivities of 5.4 μω·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.

AB - Resistivities of 5.4 μω·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.

KW - CPP GMR

KW - Single nanowire resistivity

KW - high density hard drives

KW - magnetic recording

KW - magnetic sensors

KW - read sensors

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Low-resistivity 10 nm diameter magnetic sensors

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