Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers

Benjamin Hamilton; Artie McFerrin; Jeong Myeong Ha; Marc A. Hillmyer; Michael D. Ward

Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers

Benjamin Hamilton, Artie McFerrin, Jeong Myeong Ha, Marc A. Hillmyer, Michael D. Ward

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting
Publisher	AIChE
Pages	891-892
Number of pages	2
ISBN (Print)	9781618397294
State	Published - 2011
Externally published	Yes
Event	Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting - Minneapolis, United States Duration: Oct 16 2011 → Oct 21 2016

Publication series

Name	Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting
Volume	2

Other

Other	Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting
Country/Territory	United States
City	Minneapolis
Period	10/16/11 → 10/21/16

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Hamilton, B., McFerrin, A., Ha, J. M., Hillmyer, M. A., & Ward, M. D. (2011). Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers. In Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting (pp. 891-892). (Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting; Vol. 2). AIChE.

Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers. / Hamilton, Benjamin; McFerrin, Artie; Ha, Jeong Myeong et al.
Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting. AIChE, 2011. p. 891-892 (Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hamilton, B, McFerrin, A, Ha, JM, Hillmyer, MA & Ward, MD 2011, Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers. in Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting. Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting, vol. 2, AIChE, pp. 891-892, Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting, Minneapolis, United States, 10/16/11.

Hamilton B, McFerrin A, Ha JM, Hillmyer MA, Ward MD. Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers. In Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting. AIChE. 2011. p. 891-892. (Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting).

Hamilton, Benjamin ; McFerrin, Artie ; Ha, Jeong Myeong et al. / Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers. Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting. AIChE, 2011. pp. 891-892 (Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting).

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title = "Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers",

author = "Benjamin Hamilton and Artie McFerrin and Ha, {Jeong Myeong} and Hillmyer, {Marc A.} and Ward, {Michael D.}",

year = "2011",

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AN - SCOPUS:85054853333

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BT - Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting

PB - AIChE

T2 - Materials Engineering and Sciences Division - Core Programming Topic at the 2011 AIChE Annual Meeting

Y2 - 16 October 2011 through 21 October 2016

ER -

Manipulating crystal growth and polymorphism by confinement in nanoscale crystallization chambers

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