Abstract
Supply noise measurements from a 3D IC have been presented for the first time. IR noise rather than Ldi/dt noise is shown to be dominant due to the fewer supply pins and the additional resistance from the through-silicon vias (TSVs). Kelvin probing for IR noise reveals that the effect of pins is significantly more than TSVs. A novel multi-story power delivery is demonstrated for a 393kb SRAM suppressing the IR noise by 30-70%.
Original language | English (US) |
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Title of host publication | 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers |
Pages | 46-47 |
Number of pages | 2 |
State | Published - Sep 16 2011 |
Event | 2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan Duration: Jun 15 2011 → Jun 17 2011 |
Other
Other | 2011 Symposium on VLSI Circuits, VLSIC 2011 |
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Country/Territory | Japan |
City | Kyoto |
Period | 6/15/11 → 6/17/11 |