The authors describe a model used for the design of doped channel pseudormorphic AlGaAs/InGaAs/GaAs quantum-well HIGFETs and for the simulation of digital integrated circuits based on these devices. The model is based on the self-consistent quantum mechanical calculation of subbands and electron density in InGaAs quantum wells, obtained by solving a one-dimensional effective mass Schrodinger equation. Such a calculation shows that the potential barrier between the quasi-Fermi level in the channel and the bottom of the conduction band in the barrier layer is considerably larger for the doped-channel structure. This lowers the thermionic emission gate current of the doped channel device compared to the undoped channel structure, as confirmed by experimental data. The authors measured peak transconductance gm = 471 mS/mm and peak Idsat = 660 mA/mm in 0.6-μm-gate doped-channel services. These results demonstrate the advantages of the DCHFET over the standard MODFET structure and their potential for high speed IC applications.