N-limited versus Ga-limited growth on GaN(0001̄) by MBE using NH₃

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Reflection high energy electron diffraction 48%
• Desorption 13%
• Spectroscopy 13%
• Activation energy 12%
• Condensation 11%
• Temperature 9%
• Growth kinetics 8%
• Decomposition 8%
• Control surfaces 6%
• Diffraction 6%
• Nucleation 6%
• Fluxes 4%
• Hydrogen 4%

Chemical Compounds

• Reflection High Energy Electron Diffraction 69%
• Surface 20%
• Desorption 16%
• Condensation 15%
• Reaction Activation Energy 14%
• Mass Spectrometry 14%
• Surface Temperature 14%
• Flow 13%
• Decomposition 13%
• Nucleation 8%
• Polarity 8%
• Block Like Crystal 7%
• Hydrogen 5%
• Reduction 4%

Physics & Astronomy

• high energy electrons 17%
• electron diffraction 14%
• mass spectroscopy 8%
• oscillations 8%
• condensation 7%
• desorption 7%
• Knudsen gages 6%
• decomposition 6%
• activation energy 6%
• control surfaces 6%
• specular reflection 5%
• surface temperature 4%
• suggestion 4%
• polarity 4%
• nucleation 3%
• hydrogen 2%
• kinetics 2%
• diffraction 2%
• temperature 1%