Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Yu Xuan; Gang Qian; Zhiyuan Wang; Dongge Ma

doi:10.1016/j.tsf.2007.09.046

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Yu Xuan, Gang Qian, Zhiyuan Wang, Dongge Ma

Chemical Engineering and Materials Science

Research output: Contribution to journal › Letter › peer-review

14 Scopus citations

Abstract

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.

Original language	English (US)
Pages (from-to)	7891-7893
Number of pages	3
Journal	Thin Solid Films
Volume	516
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2007.09.046
State	Published - Sep 1 2008

Bibliographical note

Funding Information:
The authors would like to thank the Hundreds Talents program of the Chinese Academy of Sciences, National Natural Foundation of China (50573075), National Science Fund for Distinguished Young Scholars of China (50325312), the Ministry of Science and Technology of China (973 program No. 2002CB613404).

Keywords

Light-emitting diodes
Near-infrared dyes
Near-infrared emission
semiconductor polymer

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title = "Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film",

abstract = "Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.",

keywords = "Light-emitting diodes, Near-infrared dyes, Near-infrared emission, semiconductor polymer",

author = "Yu Xuan and Gang Qian and Zhiyuan Wang and Dongge Ma",

note = "Funding Information: The authors would like to thank the Hundreds Talents program of the Chinese Academy of Sciences, National Natural Foundation of China (50573075), National Science Fund for Distinguished Young Scholars of China (50325312), the Ministry of Science and Technology of China (973 program No. 2002CB613404).",

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AU - Xuan, Yu

AU - Qian, Gang

AU - Wang, Zhiyuan

AU - Ma, Dongge

N1 - Funding Information: The authors would like to thank the Hundreds Talents program of the Chinese Academy of Sciences, National Natural Foundation of China (50573075), National Science Fund for Distinguished Young Scholars of China (50325312), the Ministry of Science and Technology of China (973 program No. 2002CB613404).

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.

AB - Infrared light-emitting diodes possess potential applications in optical communication and safety detection. In this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al. A near-infrared electroluminescence with a peak wavelength at 890 nm was observed, and the maximum irradiance and external quantum efficiency, respectively, reached 58 μW and 0.015%.

KW - Light-emitting diodes

KW - Near-infrared dyes

KW - Near-infrared emission

KW - semiconductor polymer

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DO - 10.1016/j.tsf.2007.09.046

M3 - Letter

AN - SCOPUS:49549124754

SN - 0040-6090

VL - 516

SP - 7891

EP - 7893

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Abstract

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Keywords

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