TY - GEN
T1 - Non-parabolic band effects on the electrical properties of superlattice FETs
AU - Maiorano, P.
AU - Gnani, E.
AU - Grassi, R.
AU - Gnudi, A.
AU - Reggiani, S.
AU - Baccarani, G.
PY - 2013/7/23
Y1 - 2013/7/23
N2 - The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
AB - The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
KW - Non-parabolicity effects
KW - k·p band structure
KW - nanowire field-effect transistor (NW-FET)
KW - superlattice-based NW-FET
UR - http://www.scopus.com/inward/record.url?scp=84880301726&partnerID=8YFLogxK
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U2 - 10.1109/ULIS.2013.6523499
DO - 10.1109/ULIS.2013.6523499
M3 - Conference contribution
AN - SCOPUS:84880301726
SN - 9781467348003
T3 - ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
SP - 93
EP - 96
BT - ULIS 2013
T2 - 14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Y2 - 19 March 2013 through 21 March 2013
ER -