Non-parabolic band effects on the electrical properties of superlattice FETs

P. Maiorano, E. Gnani, R. Grassi, A. Gnudi, S. Reggiani, G. Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.

Original languageEnglish (US)
Title of host publicationULIS 2013
Subtitle of host publicationThe 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages93-96
Number of pages4
DOIs
StatePublished - Jul 23 2013
Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
Duration: Mar 19 2013Mar 21 2013

Publication series

NameULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Other

Other14th International Conference on Ultimate Integration on Silicon, ULIS 2013
CountryUnited Kingdom
CityCoventry
Period3/19/133/21/13

Keywords

  • Non-parabolicity effects
  • k·p band structure
  • nanowire field-effect transistor (NW-FET)
  • superlattice-based NW-FET

Fingerprint Dive into the research topics of 'Non-parabolic band effects on the electrical properties of superlattice FETs'. Together they form a unique fingerprint.

Cite this