Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.
Bibliographical noteFunding Information:
MRMA thanks the Egyptian Ministry of Higher Education for funding his research activities. Prof. J. Xu acknowledges the funding support from NSF CAREER Grant No. 415-37 60D2 .
© 2016 Elsevier Ltd
- Charge transport model
- Commercial LED wafers
- LT GaN buffer layer
- Schottky barrier lowering
- Vertical MESFETs