Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

Yanbo Jin; Zhenlin Rang; Marshall I. Nathan; P. Paul Ruden; Christopher R. Newman; C. Daniel Frisbie

doi:10.1063/1.1814802

Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

Yanbo Jin, Zhenlin Rang, Marshall I. Nathan, P. Paul Ruden, Christopher R. Newman, C. Daniel Frisbie

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylrnethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm. significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm ² V ^-1 s ^-1 ; the maximum on/off current ratio was near 05 × 10 ⁶.

Original language	English (US)
Pages (from-to)	4406-4408
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1814802
State	Published - Nov 8 2004

Bibliographical note

Funding Information:
This work was partially supported by the NSF materials research science and engineering center program MRSEC (DMR No. 0212302). The authors gratefully acknowledge Paul V. Pesavento, Kanan P. Puntambekar, Lei Diao, Jeffrey A. Merlo, and Xiuyu Cai for experimental support.

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@article{ab26b2e4299a4c538dd7043c043e40e3,

title = "Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer",

abstract = "In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylrnethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm. significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm 2 V -1 s -1 ; the maximum on/off current ratio was near 05 × 10 6.",

author = "Yanbo Jin and Zhenlin Rang and Nathan, {Marshall I.} and {Paul Ruden}, P. and Newman, {Christopher R.} and {Daniel Frisbie}, C.",

note = "Funding Information: This work was partially supported by the NSF materials research science and engineering center program MRSEC (DMR No. 0212302). The authors gratefully acknowledge Paul V. Pesavento, Kanan P. Puntambekar, Lei Diao, Jeffrey A. Merlo, and Xiuyu Cai for experimental support. ",

year = "2004",

month = nov,

day = "8",

doi = "10.1063/1.1814802",

language = "English (US)",

volume = "85",

pages = "4406--4408",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

AU - Jin, Yanbo

AU - Rang, Zhenlin

AU - Nathan, Marshall I.

AU - Paul Ruden, P.

AU - Newman, Christopher R.

AU - Daniel Frisbie, C.

N1 - Funding Information: This work was partially supported by the NSF materials research science and engineering center program MRSEC (DMR No. 0212302). The authors gratefully acknowledge Paul V. Pesavento, Kanan P. Puntambekar, Lei Diao, Jeffrey A. Merlo, and Xiuyu Cai for experimental support.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylrnethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm. significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm 2 V -1 s -1 ; the maximum on/off current ratio was near 05 × 10 6.

AB - In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylrnethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm. significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm 2 V -1 s -1 ; the maximum on/off current ratio was near 05 × 10 6.

UR - http://www.scopus.com/inward/record.url?scp=10844271427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10844271427&partnerID=8YFLogxK

U2 - 10.1063/1.1814802

DO - 10.1063/1.1814802

M3 - Article

AN - SCOPUS:10844271427

VL - 85

SP - 4406

EP - 4408

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

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