Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

Yanbo Jin, Zhenlin Rang, Marshall I. Nathan, P. Paul Ruden, Christopher R. Newman, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylrnethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm. significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm 2 V -1 s -1 ; the maximum on/off current ratio was near 05 × 10 6.

Original languageEnglish (US)
Pages (from-to)4406-4408
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
StatePublished - Nov 8 2004

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