TY - JOUR
T1 - Process integration of Co-sputtered bismuth Telluride/Antimony telluride thermoelectric junctions
AU - Shea, Ryan
AU - Gawarikar, Anand
AU - Talghader, Joseph
PY - 2014/6
Y1 - 2014/6
N2 - Incorporation of bismuth telluride/antimony telluride co-sputtered thermoelectric junctions into MEMS devices requires process developments for patterning and encapsulation as well as characterization of properties such as film stress and contact resistance. Test structures are presented for measuring important thermoelectric properties, resistivity, thermal conductivity, carrier concentration, and Seebeck coefficient. A fabrication process is presented that allows the junctions to be deposited, patterned, encapsulated, and etch released. Measurement of the thermoelectric junctions reveals a room temperature figure of merit, ZT, of 0.43 with a total Seebeck coefficient difference of 150 μV/K, resistivities of 17.4 and 7.6 μOmega;-m , and thermal conductivity of 0.34 and 0.30 W/mK for antimony telluride and bismuth telluride, respectively. The junctions have been incorporated into state of the art uncooled thermopile infrared detectors with a peak detectivity of 3× 109~cmHz1/2/W.
AB - Incorporation of bismuth telluride/antimony telluride co-sputtered thermoelectric junctions into MEMS devices requires process developments for patterning and encapsulation as well as characterization of properties such as film stress and contact resistance. Test structures are presented for measuring important thermoelectric properties, resistivity, thermal conductivity, carrier concentration, and Seebeck coefficient. A fabrication process is presented that allows the junctions to be deposited, patterned, encapsulated, and etch released. Measurement of the thermoelectric junctions reveals a room temperature figure of merit, ZT, of 0.43 with a total Seebeck coefficient difference of 150 μV/K, resistivities of 17.4 and 7.6 μOmega;-m , and thermal conductivity of 0.34 and 0.30 W/mK for antimony telluride and bismuth telluride, respectively. The junctions have been incorporated into state of the art uncooled thermopile infrared detectors with a peak detectivity of 3× 109~cmHz1/2/W.
KW - Microelectromechanical devices.
KW - Sputtering
KW - Thermoelectric devices
KW - Thin films
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U2 - 10.1109/JMEMS.2013.2283795
DO - 10.1109/JMEMS.2013.2283795
M3 - Article
AN - SCOPUS:84901910815
SN - 1057-7157
VL - 23
SP - 681
EP - 688
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 3
M1 - 6632905
ER -