Process integration of Co-sputtered bismuth Telluride/Antimony telluride thermoelectric junctions

Ryan Shea, Anand Gawarikar, Joseph Talghader

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Incorporation of bismuth telluride/antimony telluride co-sputtered thermoelectric junctions into MEMS devices requires process developments for patterning and encapsulation as well as characterization of properties such as film stress and contact resistance. Test structures are presented for measuring important thermoelectric properties, resistivity, thermal conductivity, carrier concentration, and Seebeck coefficient. A fabrication process is presented that allows the junctions to be deposited, patterned, encapsulated, and etch released. Measurement of the thermoelectric junctions reveals a room temperature figure of merit, ZT, of 0.43 with a total Seebeck coefficient difference of 150 μV/K, resistivities of 17.4 and 7.6 μOmega;-m , and thermal conductivity of 0.34 and 0.30 W/mK for antimony telluride and bismuth telluride, respectively. The junctions have been incorporated into state of the art uncooled thermopile infrared detectors with a peak detectivity of 3× 109~cmHz1/2/W.

Original languageEnglish (US)
Article number6632905
Pages (from-to)681-688
Number of pages8
JournalJournal of Microelectromechanical Systems
Issue number3
StatePublished - Jun 2014


  • Microelectromechanical devices.
  • Sputtering
  • Thermoelectric devices
  • Thin films

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