Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

X. Fu, Q. Shi, M. A. Zudov, Y. J. Chung, K. W. Baldwin, L. N. Pfeiffer, K. W. West

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Abstract

We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.

Original languageEnglish (US)
Article number205418
JournalPhysical Review B
Volume98
Issue number20
DOIs
StatePublished - Nov 26 2018

Bibliographical note

Funding Information:
We thank G. Jones, S. Hannas, T. Murphy, J. Park, A. Suslov, and A. Bangura for technical support. The work at Minnesota was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. ER 46640-SC0002567. L.N.P. and K.W.W. of Princeton University acknowledge the Gordon and Betty Moore Foundation Grant No. GBMF 4420, and the National Science Foundation MRSEC Grant No. DMR-1420541. A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by National Science Foundation Cooperative Agreement No. DMR-1644779 and the State of Florida.

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