TY - JOUR
T1 - Relaxation measurements of the persistent photoconductivity in sulfur-doped a-Si:H
AU - Quicker, D.
AU - Kakalios, J.
PY - 1996
Y1 - 1996
N2 - The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.
AB - The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.
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U2 - 10.1557/proc-420-611
DO - 10.1557/proc-420-611
M3 - Conference article
AN - SCOPUS:0030394249
SN - 0272-9172
VL - 420
SP - 611
EP - 616
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 12 April 1996
ER -