Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

L. S. Matkin; H. F. Gleeson; P. Mach; C. C. Huang; R. Pindak; G. Srajer; J. Pollmann; J. W. Goodby; M. Hird; A. Seed

doi:10.1063/1.126193

Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

L. S. Matkin, H. F. Gleeson, P. Mach, C. C. Huang, R. Pindak, G. Srajer, J. Pollmann, J. W. Goodby, M. Hird, A. Seed

Physics and Astronomy (Twin Cities)

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43 Scopus citations

Abstract

Resonant x-ray diffraction was carried out at the Se K edge in thick free-standing films of a selenophene liquid crystalline material, revealing detail of the structure of the ferro-, ferri-, and antiferroelectric phases. The ferrielectric phase was shown to have a three-layer superlattice. Moreover, the structure of a lower temperature hexatic phase was established. For the antiferroelectric phase, investigations were also carried out in a planar device configuration. The device allowed resonant scattering experiments to he carried out with and without the application of an electric field and resonant data are compared with electro-optic measurements carried out on the same device.

Original language	English (US)
Pages (from-to)	1863-1865
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126193
State	Published - Apr 3 2000

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abstract = "Resonant x-ray diffraction was carried out at the Se K edge in thick free-standing films of a selenophene liquid crystalline material, revealing detail of the structure of the ferro-, ferri-, and antiferroelectric phases. The ferrielectric phase was shown to have a three-layer superlattice. Moreover, the structure of a lower temperature hexatic phase was established. For the antiferroelectric phase, investigations were also carried out in a planar device configuration. The device allowed resonant scattering experiments to he carried out with and without the application of an electric field and resonant data are compared with electro-optic measurements carried out on the same device.",

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AU - Matkin, L. S.

AU - Gleeson, H. F.

AU - Mach, P.

AU - Huang, C. C.

AU - Pindak, R.

AU - Srajer, G.

AU - Pollmann, J.

AU - Goodby, J. W.

AU - Hird, M.

AU - Seed, A.

PY - 2000/4/3

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N2 - Resonant x-ray diffraction was carried out at the Se K edge in thick free-standing films of a selenophene liquid crystalline material, revealing detail of the structure of the ferro-, ferri-, and antiferroelectric phases. The ferrielectric phase was shown to have a three-layer superlattice. Moreover, the structure of a lower temperature hexatic phase was established. For the antiferroelectric phase, investigations were also carried out in a planar device configuration. The device allowed resonant scattering experiments to he carried out with and without the application of an electric field and resonant data are compared with electro-optic measurements carried out on the same device.

AB - Resonant x-ray diffraction was carried out at the Se K edge in thick free-standing films of a selenophene liquid crystalline material, revealing detail of the structure of the ferro-, ferri-, and antiferroelectric phases. The ferrielectric phase was shown to have a three-layer superlattice. Moreover, the structure of a lower temperature hexatic phase was established. For the antiferroelectric phase, investigations were also carried out in a planar device configuration. The device allowed resonant scattering experiments to he carried out with and without the application of an electric field and resonant data are compared with electro-optic measurements carried out on the same device.

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Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

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