Single nanoparticle semiconductor devices

Yongping Ding; Ying Dong; Ameya Bapat; Julia Deneen; C. Barry Carter; Uwe R. Kortshagen; Stephen A. Campbell

doi:10.1117/12.630852

Single nanoparticle semiconductor devices

Yongping Ding, Ying Dong, Ameya Bapat, Julia Deneen, C. Barry Carter, Uwe R. Kortshagen, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 ⁷ A/cm ².

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	W.Y. Lai, L.E. Ocola, S. Pau
Volume	6002
DOIs	https://doi.org/10.1117/12.630852
State	Published - 2005
Event	Nanofabrication: Technologies, Devices, and Applications II - Boston, MA, United States Duration: Oct 23 2005 → Oct 25 2005

Other

Other	Nanofabrication: Technologies, Devices, and Applications II
Country/Territory	United States
City	Boston, MA
Period	10/23/05 → 10/25/05

Keywords

FET
Nanoparticle
Schottky barrier transistor
Silicon

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10.1117/12.630852

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Ding, Y, Dong, Y, Bapat, A, Deneen, J, Carter, CB, Kortshagen, UR & Campbell, SA 2005, Single nanoparticle semiconductor devices. in WY Lai, LE Ocola & S Pau (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 6002, 60020I, Nanofabrication: Technologies, Devices, and Applications II, Boston, MA, United States, 10/23/05. https://doi.org/10.1117/12.630852

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keywords = "FET, Nanoparticle, Schottky barrier transistor, Silicon",

author = "Yongping Ding and Ying Dong and Ameya Bapat and Julia Deneen and Carter, {C. Barry} and Kortshagen, {Uwe R.} and Campbell, {Stephen A.}",

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doi = "10.1117/12.630852",

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editor = "W.Y. Lai and L.E. Ocola and S. Pau",

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T1 - Single nanoparticle semiconductor devices

AU - Ding, Yongping

AU - Dong, Ying

AU - Bapat, Ameya

AU - Deneen, Julia

AU - Carter, C. Barry

AU - Kortshagen, Uwe R.

AU - Campbell, Stephen A.

PY - 2005

Y1 - 2005

N2 - Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/cm 2.

AB - Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/cm 2.

KW - FET

KW - Nanoparticle

KW - Schottky barrier transistor

KW - Silicon

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DO - 10.1117/12.630852

M3 - Conference contribution

AN - SCOPUS:33644659841

VL - 6002

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Lai, W.Y.

A2 - Ocola, L.E.

A2 - Pau, S.

T2 - Nanofabrication: Technologies, Devices, and Applications II

Y2 - 23 October 2005 through 25 October 2005

ER -

Single nanoparticle semiconductor devices

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