The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.
Bibliographical noteFunding Information:
Manuscript received September 15, 2009; revised February 16, 2010; accepted March 3, 2010. Date of current version May 19, 2010. The work of X. F. Yao and J. D. Harms was supported in part by the National Science Foundation under Award ECCS-0702264. The review of this paper was arranged by Editor C. McAndrew. J. D. Harms, F. Ebrahimi, and J.-P. Wang are with the University of Minnesota, Minneapolis, MN 55455 USA (e-mail: email@example.com). X. Yao was with the University of Minnesota, Minneapolis, MN 55455 USA. She is now with Western Digital Corporation, San Jose, CA 95138 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2010.2047073
Copyright 2010 Elsevier B.V., All rights reserved.
- Magnetic random-access memory (MRAM)
- Magnetic tunnel junction (MTJ)
- Spin-torque-transfer (STT)