SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions

Jonathan D. Harms; Farbod Ebrahimi; Xiaofeng Yao; Jian Ping Wang

doi:10.1109/TED.2010.2047073

SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions

Jonathan D. Harms, Farbod Ebrahimi, Xiaofeng Yao, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.

Original language	English (US)
Article number	5464332
Pages (from-to)	1425-1430
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	6
DOIs	https://doi.org/10.1109/TED.2010.2047073
State	Published - Jun 2010

Bibliographical note

Funding Information:
Manuscript received September 15, 2009; revised February 16, 2010; accepted March 3, 2010. Date of current version May 19, 2010. The work of X. F. Yao and J. D. Harms was supported in part by the National Science Foundation under Award ECCS-0702264. The review of this paper was arranged by Editor C. McAndrew. J. D. Harms, F. Ebrahimi, and J.-P. Wang are with the University of Minnesota, Minneapolis, MN 55455 USA (e-mail: jpwang@umn.edu). X. Yao was with the University of Minnesota, Minneapolis, MN 55455 USA. She is now with Western Digital Corporation, San Jose, CA 95138 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2010.2047073

Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.

Keywords

Macromodel
Magnetic random-access memory (MRAM)
Magnetic tunnel junction (MTJ)
SPICE
Spin-torque-transfer (STT)

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abstract = "The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.",

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SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions

Abstract

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Keywords

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