Sputter deposition of semicrystalline tin dioxide films

Engineering & Materials Science

• Tin dioxide 100%
• Sputter deposition 95%
• Sputtering 20%
• Crystallinity 19%
• Lime 17%
• Amorphous films 17%
• Glass 16%
• X ray diffraction 15%
• Carrier concentration 14%
• Deposition rates 13%
• Oxygen 12%
• Permeation 12%
• Gases 12%
• Film thickness 11%
• Powder Diffraction 9%
• Carrier transport 8%
• Charge carriers 8%
• Diffraction patterns 7%
• Gallium 7%
• Hall effect 7%
• Magnetron sputtering 7%
• Zinc oxide 6%
• Indium 6%
• Texturing 6%
• Transport properties 6%
• Silicon wafers 6%
• Temperature 6%
• Energy gap 5%
• Argon 5%
• Water 5%
• Diffraction 5%
• Electric properties 5%
• Solar cells 5%
• Crystalline materials 5%
• Crystals 5%
• Semiconductor materials 4%
• Copper 4%
• Silicon 4%
• Substrates 3%
• Chemical analysis 3%

Chemical Compounds

• Sputter Deposition 82%
• Tin Dioxide 77%
• Liquid Film 28%
• Sputtering 14%
• Electron Mobility 10%
• Crystallinity 10%
• Gas 9%
• Amorphous Material 9%
• X-Ray Diffraction 6%
• Polycrystalline Film 6%
• Dioxygen 6%
• Hall Effect 6%
• Amorphous Film 5%
• Diselenide 5%
• Zinc Oxide 4%
• Charge Carrier 4%
• Transport Property 4%
• Polycrystalline Solid 3%
• Solar Cell 3%
• Electrical Property 3%
• Semiconductor 3%
• Band Gap 3%
• Glass 3%
• Resistance 2%
• Ambient Reaction Temperature 2%
• Time 1%
• Surface 1%
• Application 1%

Physics & Astronomy

• dioxides 62%
• tin 54%
• calcium oxides 15%
• crystallinity 11%
• sputtering 10%
• glass 10%
• diffraction 9%
• electron mobility 9%
• oxygen 8%
• film thickness 7%
• gases 6%
• x rays 6%
• gas composition 5%
• water 5%
• silicon 4%
• gallium 4%
• zinc oxides 4%
• indium 4%
• Hall effect 4%
• emerging 3%
• charge carriers 3%
• coverings 3%
• magnetron sputtering 3%
• diffraction patterns 3%
• transport properties 3%
• argon 3%
• wafers 3%
• solar cells 3%
• electrical properties 3%
• copper 3%
• broadband 3%
• electrical resistivity 2%
• temperature 2%
• room temperature 2%
• matrices 2%
• crystals 2%