Sputter deposition of YBa2Cu3O7-x films using a hemispherical target in a Hg vapor triode plasma

G. K. Wehner, Y. H. Kim, D. H. Kim, A. M. Goldman

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Abstract

High-quality stoichiometric films of YBa2 Cu3 O 7-x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.

Original languageEnglish (US)
Pages (from-to)1187-1189
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number14
DOIs
StatePublished - 1988

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