Sputter deposition of YBa2Cu3O7-x films using a hemispherical target in a Hg vapor triode plasma

G. K. Wehner; Y. H. Kim; D. H. Kim; A. M. Goldman

doi:10.1063/1.99671

Sputter deposition of YBa₂Cu₃O_7-x films using a hemispherical target in a Hg vapor triode plasma

G. K. Wehner, Y. H. Kim, D. H. Kim, A. M. Goldman

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Abstract

High-quality stoichiometric films of YBa₂ Cu₃ O _7-x have been grown epitaxially on SrTiO₃ substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.

Original language	English (US)
Pages (from-to)	1187-1189
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	14
DOIs	https://doi.org/10.1063/1.99671
State	Published - 1988
Externally published	Yes

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@article{493915265d014a30a26212f658174c9e,

title = "Sputter deposition of YBa2Cu3O7-x films using a hemispherical target in a Hg vapor triode plasma",

abstract = "High-quality stoichiometric films of YBa2 Cu3 O 7-x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.",

author = "Wehner, {G. K.} and Kim, {Y. H.} and Kim, {D. H.} and Goldman, {A. M.}",

year = "1988",

doi = "10.1063/1.99671",

language = "English (US)",

volume = "52",

pages = "1187--1189",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Sputter deposition of YBa2Cu3O7-x films using a hemispherical target in a Hg vapor triode plasma

AU - Wehner, G. K.

AU - Kim, Y. H.

AU - Kim, D. H.

AU - Goldman, A. M.

PY - 1988

Y1 - 1988

N2 - High-quality stoichiometric films of YBa2 Cu3 O 7-x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.

AB - High-quality stoichiometric films of YBa2 Cu3 O 7-x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.

UR - http://www.scopus.com/inward/record.url?scp=0000073097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000073097&partnerID=8YFLogxK

U2 - 10.1063/1.99671

DO - 10.1063/1.99671

M3 - Article

AN - SCOPUS:0000073097

SN - 0003-6951

VL - 52

SP - 1187

EP - 1189

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Sputter deposition of YBa₂Cu₃O_7-x films using a hemispherical target in a Hg vapor triode plasma

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