Abstract
Studies of aluminum chemical vapor deposition (CVD) from dimethylethylamine alane on GaAs(100) 2×4 surfaces were used to identify the high-temperature, flux-limited growth regime and determine the effective sticking coefficient α. Following a short induction period, α was found to achieve a largely temperature-independent steady-state value (α=0.13±0.04), substantially lower than expected based on current CVD models. We propose that steric effects - previously ignored in CVD - play a role in determining the upper limit of a and therefore the maximum achievable growth rate.
Original language | English (US) |
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Pages (from-to) | 4191-4193 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 27 |
DOIs | |
State | Published - Dec 30 1996 |