Strain-engineered MoTe2 photodetector in silicon photonics at 1550 nm

R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. van Thourhout, T. Low, S. Bank, V. J. Sorger

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2020
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
StatePublished - 2020
EventCLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F183-CLEO-SI 2020


ConferenceCLEO: Science and Innovations, CLEO_SI 2020
CountryUnited States

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