Strain-engineered MoTe2 photodetector in silicon photonics at 1550 nm

R. Maiti; C. Patil; T. Xie; J. G. Azadani; R. Amin; M. Miscuglio; D. van Thourhout; T. Low; S. Bank; V. J. Sorger

doi:10.1364/CLEO_SI.2020.SM3R.6

Strain-engineered MoTe₂ photodetector in silicon photonics at 1550 nm

R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. van Thourhout, T. Low, S. Bank, V. J. Sorger

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.SM3R.6
State	Published - 2020
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F183-CLEO-SI 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

Bibliographical note

Publisher Copyright:
© OSA 2020 © 2020 The Author (s)

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10.1364/CLEO_SI.2020.SM3R.6

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Cite this

Maiti, R., Patil, C., Xie, T., Azadani, J. G., Amin, R., Miscuglio, M., van Thourhout, D., Low, T., Bank, S., & Sorger, V. J. (2020). Strain-engineered MoTe₂ photodetector in silicon photonics at 1550 nm. In CLEO: Science and Innovations, CLEO_SI 2020 Article SM3R.6 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

Maiti, R, Patil, C, Xie, T, Azadani, JG, Amin, R, Miscuglio, M, van Thourhout, D, Low, T, Bank, S & Sorger, VJ 2020, Strain-engineered MoTe₂ photodetector in silicon photonics at 1550 nm. in CLEO: Science and Innovations, CLEO_SI 2020., SM3R.6, Optics InfoBase Conference Papers, vol. Part F183-CLEO-SI 2020, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_SI.2020.SM3R.6

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abstract = "Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.",

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