Stress effects in p-type AIGaN/GaN heterostructures

Agustinus Sutandi, P P Ruden, Kevin F. Brennan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The physics of bulk wurtzite-structure III-nitride materials and of III-nitride heterostructures includes many phenomena that can be modulated by the application of stress. In particular, p-type material is expected to display a rich variety of piezo-resistive and piezo-optic effects that originate from the stress-induced modulation of lattice polarization charges, of valence band energies, and of bulk, surface, and interface defect states in the band gap. Here we focus on the expected effects of in-plane uniaxial on p-channel AlGaN/GaN heterostructures grown along the hexagonal axis on sapphire substrates. The valence band structure in the channel region is calculated self-consistently in the framework of a six-band Rashba-Sheka-Pikus (RSP) Hamiltonian. Stress-effects are included (in linear elastic theory) through deformation potentials and through the modulation of interfacial polarization charges associated with the piezoelectric nature of the constituent materials.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Electronics
Pages108-113
Number of pages6
StatePublished - Dec 1 2001
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Publication series

NameMaterials Research Society Symposium Proceedings
Volume680
ISSN (Print)0272-9172

Other

Other2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/16/014/20/01

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