Study of surface reactions during plasma enhanced chemical vapor deposition of SiO₂ from SiH₄, O₂, and Ar plasma

Engineering & Materials Science

• Surface reactions 100%
• Plasma enhanced chemical vapor deposition 99%
• Plasmas 64%
• Silanes 31%
• Oxides 17%
• Ion bombardment 15%
• Hydrides 12%
• Atoms 10%
• Ions 9%
• Fourier transform infrared spectroscopy 6%
• Desorption 5%
• Resonators 4%
• Infrared radiation 4%
• Oxygen 4%
• Silicon 3%
• Flow rate 3%
• Gases 2%
• Hot Temperature 2%
• Experiments 1%

Chemical Compounds

• Plasma Enhanced Chemical Vapour Deposition 84%
• Surface Reaction 72%
• Plasma 43%
• Silicon Hydride 23%
• Surface 22%
• Ion Bombardment 13%
• Oxide 10%
• Silane 9%
• Hydride 8%
• Hydroxyl 8%
• Attenuated Total Reflection 5%
• Reaction Path 5%
• Flow Kinetics 3%
• Desorption 3%
• Fourier Transform Infrared Spectroscopy 2%
• Gas 2%
• Dioxygen 2%
• Ion 1%

Physics & Astronomy

• surface reactions 72%
• vapor deposition 53%
• hydrides 25%
• bombardment 13%
• fragments 12%
• oxides 12%
• silanes 10%
• silicon 10%
• ions 9%
• oxygen plasma 5%
• atoms 5%
• insertion 4%
• infrared spectra 4%
• infrared spectroscopy 4%
• desorption 4%
• vapor phases 3%
• flow velocity 3%
• reactors 3%
• resonators 3%