Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy

P. R. Pukite, P. I. Cohen

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We have used reflection high energy electron diffraction (RHEED) to determine the step structure on Ge and GaAs surfaces. The results show the key role that inequivalent steps on Ge substrates play in suppressing antiphase domain formation at the GaAs/Ge(100) interface. For Ge surfaces misoriented toward the [011] direction and exposed to an As flux, a mass migration causing a four-monolayer step periodicity is observed. If a Ga flux is then applied, a single domain of GaAs is formed. The single domain is observed at the start of growth with weak half order streaks appearing in only one azimuth. In contrast, for surfaces misoriented exactly toward the [010]. RHEED measurements show a different distribution of multilayer step heights with no clearly predominant even or odd layer step height. GaAs grown on this surface shows a reconstruction consisting of two domains.

Original languageEnglish (US)
Pages (from-to)214-220
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Feb 2 1987

Bibliographical note

Funding Information:
Acknowledgements This work was supported in part by the NSF under grant DMR-8319821 and by the MN Center for Microelectronics and Information Sciences. We wish to thank G.J. Whaley, A.M. Wowchak, and N.D. Zhou for their assistance in many phases of this project. We thank H. Morkoc and P. Sheldon for providing Ge wafers and M/A-COM for providing misoriented GaAs substrates.

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