Temperature effect of degradation in tunneling and conventional silicon dioxides

Hyeon Seag Kim, S. A. Campbell, Kyung Ho Lee, Dong Myong Kim, Kwang Yell Seo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The charge to breakdown (QBD) was studied as functions of both temperature and current injection level under stress for tunnel anneal (40 angstroms) and conventional (103 angstroms) silicon dioxide (SiO2) in the metal-oxide-semiconductor (MOS) system. The charge to breakdown is almost independent of current injection level at higher temperatures for 103 angstroms SiO2 films although the QBD of 40 angstroms SiO2 films strongly depends both on current level and on temperature. Higher activation energies were obtained for 40 angstroms oxides at lower temperatures (25 °C-100 °C), while larger activation energy was obtained for 103 angstroms oxides at higher temperatures (150 °C-200 °C).

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
Editors Anon
PublisherIEEE
Pages722-725
Number of pages4
Volume2
StatePublished - Jan 1 1997
EventProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea
Duration: May 25 1997May 30 1997

Other

OtherProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
CitySeoul, Korea
Period5/25/975/30/97

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