Temperature effect of degradation in tunneling and conventional silicon dioxides

Hyeon Seag Kim; S. A. Campbell; Kyung Ho Lee; Dong Myong Kim; Kwang Yell Seo

Temperature effect of degradation in tunneling and conventional silicon dioxides

Hyeon Seag Kim, S. A. Campbell, Kyung Ho Lee, Dong Myong Kim, Kwang Yell Seo

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The charge to breakdown (Q_BD) was studied as functions of both temperature and current injection level under stress for tunnel anneal (40 angstroms) and conventional (103 angstroms) silicon dioxide (SiO₂) in the metal-oxide-semiconductor (MOS) system. The charge to breakdown is almost independent of current injection level at higher temperatures for 103 angstroms SiO₂ films although the Q_BD of 40 angstroms SiO₂ films strongly depends both on current level and on temperature. Higher activation energies were obtained for 40 angstroms oxides at lower temperatures (25 °C-100 °C), while larger activation energy was obtained for 103 angstroms oxides at higher temperatures (150 °C-200 °C).

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
Editors	Anon
Publisher	IEEE
Pages	722-725
Number of pages	4
Volume	2
State	Published - Jan 1 1997
Event	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea Duration: May 25 1997 → May 30 1997

Other

Other	Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
City	Seoul, Korea
Period	5/25/97 → 5/30/97

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Temperature effect of degradation in tunneling and conventional silicon dioxides. / Kim, Hyeon Seag; Campbell, S. A.; Lee, Kyung Ho et al.
Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. ed. / Anon. Vol. 2 IEEE, 1997. p. 722-725.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, HS, Campbell, SA, Lee, KH, Kim, DM & Seo, KY 1997, Temperature effect of degradation in tunneling and conventional silicon dioxides. in Anon (ed.), Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. vol. 2, IEEE, pp. 722-725, Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, 5/25/97.

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AB - The charge to breakdown (QBD) was studied as functions of both temperature and current injection level under stress for tunnel anneal (40 angstroms) and conventional (103 angstroms) silicon dioxide (SiO2) in the metal-oxide-semiconductor (MOS) system. The charge to breakdown is almost independent of current injection level at higher temperatures for 103 angstroms SiO2 films although the QBD of 40 angstroms SiO2 films strongly depends both on current level and on temperature. Higher activation energies were obtained for 40 angstroms oxides at lower temperatures (25 °C-100 °C), while larger activation energy was obtained for 103 angstroms oxides at higher temperatures (150 °C-200 °C).

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Temperature effect of degradation in tunneling and conventional silicon dioxides

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