The role of carbon in the precipitation of oxygen in silicon

G. S. Oehrlein; D. J. Challou; A. E. Jaworowski; J. W. Corbett

doi:10.1016/0375-9601(81)90180-8

The role of carbon in the precipitation of oxygen in silicon

G. S. Oehrlein, D. J. Challou, A. E. Jaworowski, J. W. Corbett

Computer Science and Engineering

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Abstract

Oxygen precipitates were formed in Czochralski-grown silicon samples at different temperatures and for different lenghts of times of heat treatment. Precipitation was evident from infrared(IR) analysis of so treated samples. These samples were irradiated with 2 MeV electrons at near room temperature (310 K). Deep level transient spectroscopy measurements and IR measurements were performed on these samples. The results show directly that a single carbon atom or a carbon-oxygen complex can serve as nucleation centers for the oxygen precipitation.

Original language	English (US)
Pages (from-to)	117-119
Number of pages	3
Journal	Physics Letters A
Volume	86
Issue number	2
DOIs	https://doi.org/10.1016/0375-9601(81)90180-8
State	Published - Nov 2 1981

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abstract = "Oxygen precipitates were formed in Czochralski-grown silicon samples at different temperatures and for different lenghts of times of heat treatment. Precipitation was evident from infrared(IR) analysis of so treated samples. These samples were irradiated with 2 MeV electrons at near room temperature (310 K). Deep level transient spectroscopy measurements and IR measurements were performed on these samples. The results show directly that a single carbon atom or a carbon-oxygen complex can serve as nucleation centers for the oxygen precipitation.",

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AU - Jaworowski, A. E.

AU - Corbett, J. W.

PY - 1981/11/2

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AB - Oxygen precipitates were formed in Czochralski-grown silicon samples at different temperatures and for different lenghts of times of heat treatment. Precipitation was evident from infrared(IR) analysis of so treated samples. These samples were irradiated with 2 MeV electrons at near room temperature (310 K). Deep level transient spectroscopy measurements and IR measurements were performed on these samples. The results show directly that a single carbon atom or a carbon-oxygen complex can serve as nucleation centers for the oxygen precipitation.

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The role of carbon in the precipitation of oxygen in silicon

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