Theoretical analysis of Li-doped CdZnO-based high quantum efficiency multiple quantum-well green light emitting diode

Sushil Kumar Pandey; Saurabh Kumar Pandey; Shruti Verma; Vishnu Awasthi; Shaibal Mukherjee

doi:10.1166/jno.2014.1615

Theoretical analysis of Li-doped CdZnO-based high quantum efficiency multiple quantum-well green light emitting diode

Sushil Kumar Pandey, Saurabh Kumar Pandey, Shruti Verma, Vishnu Awasthi, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A comprehensive numerical analysis of Cd_0.4Zn_0.6O/ZnO multiple quantum well (MQW)/barrier green light emitting diode (LED) with high internal quantum efficiency (IQE) is presented. Room temperature electroluminescence (EL) from the MQW green LED is obtained 516 nm wavelength with a device IQE around 94%, while the LED has a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the concerned green LED performance at room temperature. Room temperature EL intensity is observed to experience a 1.25-fold enhancement by Li ion doping (Li-doping concentration is maintained at 1 × 10¹⁸ cm^-3 ) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.

Original language	English (US)
Pages (from-to)	449-457
Number of pages	9
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	9
Issue number	4
DOIs	https://doi.org/10.1166/jno.2014.1615
State	Published - Aug 1 2014

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Publisher Copyright:
Copyright © 2014 American Scientific Publishers

Keywords

CdZnO
Green LED
Internal quantum efficiency
Li-doping
MgZnO
Polarization-induced Stark effect
ZnO

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title = "Theoretical analysis of Li-doped CdZnO-based high quantum efficiency multiple quantum-well green light emitting diode",

abstract = "A comprehensive numerical analysis of Cd0.4Zn0.6O/ZnO multiple quantum well (MQW)/barrier green light emitting diode (LED) with high internal quantum efficiency (IQE) is presented. Room temperature electroluminescence (EL) from the MQW green LED is obtained 516 nm wavelength with a device IQE around 94%, while the LED has a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the concerned green LED performance at room temperature. Room temperature EL intensity is observed to experience a 1.25-fold enhancement by Li ion doping (Li-doping concentration is maintained at 1 × 1018 cm-3 ) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.",

keywords = "CdZnO, Green LED, Internal quantum efficiency, Li-doping, MgZnO, Polarization-induced Stark effect, ZnO",

author = "Pandey, {Sushil Kumar} and Pandey, {Saurabh Kumar} and Shruti Verma and Vishnu Awasthi and Shaibal Mukherjee",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 American Scientific Publishers",

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AU - Pandey, Sushil Kumar

AU - Pandey, Saurabh Kumar

AU - Verma, Shruti

AU - Awasthi, Vishnu

AU - Mukherjee, Shaibal

PY - 2014/8/1

Y1 - 2014/8/1

N2 - A comprehensive numerical analysis of Cd0.4Zn0.6O/ZnO multiple quantum well (MQW)/barrier green light emitting diode (LED) with high internal quantum efficiency (IQE) is presented. Room temperature electroluminescence (EL) from the MQW green LED is obtained 516 nm wavelength with a device IQE around 94%, while the LED has a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the concerned green LED performance at room temperature. Room temperature EL intensity is observed to experience a 1.25-fold enhancement by Li ion doping (Li-doping concentration is maintained at 1 × 1018 cm-3 ) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.

AB - A comprehensive numerical analysis of Cd0.4Zn0.6O/ZnO multiple quantum well (MQW)/barrier green light emitting diode (LED) with high internal quantum efficiency (IQE) is presented. Room temperature electroluminescence (EL) from the MQW green LED is obtained 516 nm wavelength with a device IQE around 94%, while the LED has a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the concerned green LED performance at room temperature. Room temperature EL intensity is observed to experience a 1.25-fold enhancement by Li ion doping (Li-doping concentration is maintained at 1 × 1018 cm-3 ) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment.

KW - CdZnO

KW - Green LED

KW - Internal quantum efficiency

KW - Li-doping

KW - MgZnO

KW - Polarization-induced Stark effect

KW - ZnO

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JO - Journal of Nanoelectronics and Optoelectronics

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ER -

Theoretical analysis of Li-doped CdZnO-based high quantum efficiency multiple quantum-well green light emitting diode

Abstract

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Keywords

UN SDGs

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