Using the quantum capacitance in graphene to enable varactors for passive wireless sensing applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A wireless sensor concept based upon the quantum capacitance effect in graphene is described. By utilizing thin gate dielectrics (EOT < 2 nm), the capacitance in a metal-insulator-graphene structure varies with charge concentration through the quantum capacitance effect. The high capacitance per unit area allows orders of magnitude improvement in scalability compared to MEMS-based sensors, while the high mobility in graphene allows high quality factors, Q, to be obtained. When operated away from the Dirac point, simulations using realistic structural and transport parameters predict capacitance tuning ratios of > 4 and Q values > 30 at 1 GHz. When operated at the Dirac point, the capacitance shows a strong temperature sensitivity, suggesting potential applications as a wireless temperature sensor.

Original languageEnglish (US)
Title of host publicationIEEE Sensors 2011 Conference, SENSORS 2011
Pages994-997
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event10th IEEE SENSORS Conference 2011, SENSORS 2011 - Limerick, Ireland
Duration: Oct 28 2011Oct 31 2011

Publication series

NameProceedings of IEEE Sensors

Other

Other10th IEEE SENSORS Conference 2011, SENSORS 2011
Country/TerritoryIreland
CityLimerick
Period10/28/1110/31/11

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