VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

T. K. Higman; J. M. Higman; M. A. Emanuel; K. Hess; J. J. Coleman; J. Kolodzey

doi:10.1109/T-ED.1987.23309

VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

T. K. Higman, J. M. Higman, M. A. Emanuel, K. Hess, J. J. Coleman, J. Kolodzey

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2381
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1987.23309
State	Published - Nov 1987

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title = "VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode",

author = "Higman, {T. K.} and Higman, {J. M.} and Emanuel, {M. A.} and K. Hess and Coleman, {J. J.} and J. Kolodzey",

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AU - Higman, T. K.

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AU - Kolodzey, J.

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VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

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